 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 OptiMOS(R)-T2 Power-Transistor Product Summary V DS R DS(on),max (SMD version) ID 55 7.6 80 V m A Features * N-channel - Enhancement mode * Automotive AEC Q101 qualified * MSL1 up to 260C peak reflow * 175C operating temperature * Green product (RoHS compliant) * 100% Avalanche tested PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB80N06S3L-08 IPI80N06S3L-08 IPP80N06S3L-08 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 3N06L08 3N06L08 3N06L08 Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25 C, V GS=10 V T C=100 C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage3) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS I AS V GS P tot T j, T stg T C=25 C T C=25 C I D=40 A Value 80 61 320 240 80 16 105 -55 ... +175 55/175/56 mJ A V W C Unit A Rev. 1.1 page 1 2007-11-07 IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 Parameter Symbol Conditions min. Thermal characteristics2) Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R thJC R thJA R thJA minimal footprint 6 cm2 cooling area4) Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D= 1 mA V GS(th) I DSS V DS=V GS, I D=55 A V DS=55 V, V GS=0 V, T j=25 C V DS=55 V, V GS=0 V, T j=125 C2) Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=16 V, V DS=0 V V GS=5 V, I D=29 A V GS=5 V, I D=29 A, SMD version V GS=10 V, I D=43 A V GS=10 V, I D=43 A, SMD version 55 1.2 1.7 0.01 2.2 1 A V 1.4 62 62 40 K/W Values typ. max. Unit - 1 1 11.5 11.2 6.5 6.2 100 100 14.2 13.9 7.9 7.6 nA m Rev. 1.1 page 2 2007-11-07 IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 Parameter Symbol Conditions min. Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current2) Diode pulse current2) Diode forward voltage Reverse recovery time2) Reverse recovery charge2) 1) Values typ. max. Unit C iss C oss Crss t d(on) tr t d(off) tf V DD=27.5 V, V GS=10 V, I D=80 A, R G=3.5 V GS=0 V, V DS=25 V, f =1 MHz - 6475 812 775 16 35 39 25 - pF ns Q gs Q gd Qg V plateau V DD=11 V, I D=80 A, V GS=0 to 10 V - 34 16 89 4.9 134 - nC V IS I S,pulse V SD t rr Q rr T C=25 C V GS=0 V, I F=80 A, T j=25 C V R=27.5 V, I F=I S, di F/dt =100 A/s 0.6 - 0.9 40 50 80 320 1.3 - A V ns nC Current is limited by bondwire; with an R thJC = 1.4 K/W the chip is able to carry 86 A at 25C. For detailed information see Application Note ANPS071E 2) Defined by design. Not subject to production test. Qualified at -5V and +16V 3) 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.1 page 3 2007-11-07 IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 1 Power dissipation P tot = f(T C); V GS 4 V 2 Drain current I D = f(T C); V GS 4 V 120 100 100 80 80 60 P tot [W] 60 I D [A] 40 20 0 0 50 100 150 200 0 50 100 150 200 40 20 0 T C [C] T C [C] 3 Safe operating area I D = f(V DS); T C = 25 C; D = 0 parameter: t p 1000 4 Max. transient thermal impedance Z thJC = f(t p) parameter: D =t p/T 101 1 s 10 s 100 0.5 100 1 ms 100 s Z thJC [K/W] 0.1 I D [A] 10-1 0.05 10 10-2 0.01 single pulse 1 0.1 1 10 100 10-3 10-7 10-6 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 1.1 page 4 2007-11-07 IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 5 Typ. output characteristics I D = f(V DS); T j = 25 C parameter: V GS 160 10 V 6 Typ. drain-source on-state resistance R DS(on) = f(I D); T j = 25 C parameter: V GS 16 140 120 14 5V 12 5V 80 60 40 20 0 0 1 2 3 4 5 6 4.5 V R DS(on) [m] 100 I D [A] 10 6V 8 8V 4V 10 V 3.5 V 3V 6 4 0 50 100 150 V DS [V] I D [A] 7 Typ. transfer characteristics I D = f(V GS); V DS = 4 V parameter: T j 160 140 8 Typ. drain-source on-state resistance R DS(on) = f(T j); I D = 80 A; V GS = 10 V 13 11 120 100 -55 C R DS(on) [m] 6 25 C 9 I D [A] 80 60 40 175 C 7 5 20 0 0 1 2 3 4 5 3 -60 -20 20 60 100 140 180 V GS [V] T j [C] Rev. 1.1 page 5 2007-11-07 IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 9 Typ. gate threshold voltage V GS(th) = f(T j); V GS = V DS parameter: I D 3 104 Ciss 10 Typ. capacitances C = f(V DS); V GS = 0 V; f = 1 MHz 2.5 Coss 2 V GS(th) [V] C [pF] 1.5 55A 550A 103 Crss 1 0.5 0 -60 -20 20 60 100 140 180 0 5 10 15 20 25 30 T j [C] V DS [V] 11 Typical forward diode characteristicis IF = f(VSD) parameter: T j 103 12 Typ. avalanche characteristics I AV = f(t AV) parameter: T j(start) 100 100C 150C 25C 102 I AV [A] 101 175 C 25 C I F [A] 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1 0.1 1 10 100 1000 V SD [V] t AV [s] Rev. 1.1 page 6 2007-11-07 IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 13 Typical avalanche Energy E AS = f(T j) parameter: I D 600 66 64 20 A 14 Drain-source breakdown voltage V BR(DSS) = f(T j); I D = 1 mA 500 62 60 400 V BR(DSS) [V] 50 100 150 200 58 56 54 52 E AS [mJ] 300 40 A 200 80 A 100 50 48 0 0 46 -60 -20 20 60 100 140 180 T j [C] T j [C] 15 Typ. gate charge V GS = f(Q gate); I D = 80 A pulsed parameter: V DD 12 16 Gate charge waveforms 11 V 44 V V GS Qg 10 8 V GS [V] 6 4 2 Q gate Q gs 0 50 100 150 0 Q gd Q gate [nC] Rev. 1.1 page 7 2007-11-07 IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 Published by Infineon Technologies AG 81726 Munich, Germany (c) Infineon Technologies AG 2007 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.1 page 8 2007-11-07 IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 Revision History Version Date Changes Data Sheet 2.1 15.12.2006 Removal of ordering code Data Sheet 2.1 15.12.2006 Update of Infineon Logo Implementation of avalanche 15.12.2006 current single pulse Data Sheet 2.1 Data Sheet 2.1 15.12.2006 Removal of ESD class Data Sheet 2.1 15.12.2006 Update of Infineon address Removal of foot note 3, avalanche 15.12.2006 diagrams Data Sheet 2.1 Data Sheet 2.1 15.12.2006 Update of trr and Qrr typ Data Sheet 2.1 15.12.2006 Update of disclaimer Implementation of RoHS and AEC 15.12.2006 logo, update of feature list Data Sheet 2.1 Data Sheet 1.1 07.11.2007 Update of data sheet layout Data Sheet 1.1 07.11.2007 Adaptation of Ias implementation of footnote 2 for 07.11.2007 Eas specification removal of Vdg specification from 07.11.2007 data sheet Data Sheet 1.1 Data Sheet 1.1 Rev. 1.1 page 9 2007-11-07 |
Price & Availability of IPB80N06S3L-08
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |